What Are You Looking For?
Enriched Boric Acid-11 (H₃¹¹BO₃) With CAS No.13813-78-0
Product Features
Enriched Boric Acid-11 takes the form of white crystalline powder with a molecular weight of 62.03 g/mol. Its thermal neutron capture cross-section is only 0.005 barns, far lower than that of natural boron. During semiconductor ion implantation, it eliminates interference caused by ¹⁰B, effectively enhancing the electrical conductivity, radiation resistance and anti-interference performance of semiconductor devices.
Product Specifications
¹¹B isotopic abundance: ≥99 atom%
Product purity: ≥99.95 wt%
Controlled key impurities: Ca ≤2 ppm, Cl ≤2 ppm, Fe ≤2 ppm, Na ≤3 ppm, sulfate ions (SO₄²⁻) ≤1.5 ppm
Enriched boric acid-11 supplied by BoronHub is manufactured in strict accordance with high-purity chemical quality standards. It is hermetically packed in polyethylene bottles or fiber drums with moisture-proof protection. Customization of purity, isotopic abundance and packaging specifications is available to meet the stringent demands for high-abundance ¹¹B materials in semiconductors, special alloys and cutting-edge scientific research.
Corporate Specifications of Enriched Boric Acid-11
¹¹B isotopic abundance: ≥99 atom% Purity: ≥99.95 wt%
Impurity limits (Unit: ppm): Ca ≤2, Cl ≤2, F ≤1, Fe ≤2 , Phosphate ion (PO₄³⁻) ≤0.5, Na ≤3, sulfate ion (SO₄²⁻) ≤1.5
Total solid impurities ≤40 ppm
Packaging
Transport & storage containers: Polyethylene bottles or fiber drums lined with moisture-proof bags.
Storage requirements: Keep containers tightly sealed and store away from heat sources.
Note: Customization of purity, isotopic abundance and packaging specifications is available upon request.
What are the Application Sectors of Enriched Boric Acid-11?
*Semiconductor Industry: High-purity boron feedstock for semiconductor doping and special semiconductor manufacturing processes
*Nuclear Industry (Special Scenarios): Nuclear applications where neutron absorption must be avoided
What are the Detailed Functions of Enriched Boric Acid-11?
P-Type Doping for Semiconductors
¹¹B features an extremely low thermal neutron capture cross-section of merely 0.005 barns. As a p-type dopant for silicon wafers, it drastically mitigates soft errors induced by cosmic neutron radiation and greatly improves chip stability and radiation immunity.
High-Purity Boron Source
It is the feedstock for synthesizing high-purity boron trifluoride-11 and other semiconductor process gases, as well as all ultra-high-purity boron-dependent manufacturing steps in fabs.
Neutron-Transparent Material
Its neutron-transparent property delivers unique advantages for specialized nuclear applications that require zero neutron absorption.
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